SSG4512CE n & p-ch enhancement mode power mosfet n-ch: 6.9 a, 30 v, r ds(on) 31 m ? p-ch: -5.2 a, -30 v, r ds(on) 52 m ? elektronische bauelemente 26-dec-2011 rev. a page 1 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. rohs compliant product a suffix of -c specifies halogen & lead-free description these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipati on. features low r ds(on) provides higher efficiency and extends battery life. low thermal impedance copper leadframe sop-8 saves board space. fast switch speed. high performance trench technology. application dc-dc converters and power management in portable and battery-powered products such as computers, pri nters, pcmcia cards, cellular and cordless telephones. package information package mpq leader size sop-8 2.5k 13 inch maximum ratings (t a =25 c unless otherwise specified) parameter symbol ratings unit n-ch p-ch drain-source voltage v ds 30 -30 v gate-source voltage v gs 20 20 v continuous drain current 1 t a =25 c i d 6.9 -5.2 a t a =70 c 5.4 -6.8 a pulsed drain current 2 i dm 20 -20 a continuous source current (diode conduction) 1 i s 1.3 -1.3 a total power dissipation 1 t a =25 c p d 2.1 2.1 w t a =70 c 1.3 1.3 w operating junction and storage temperature range t j , t stg -55~150 c thermal resistance ratings maximum junction-ambient 1 t<=5 sec r ja 60 c / w maximum junction-case 1 t<=5 sec r jc 40 c / w notes 1. surface mounted on 1 x 1 fr4 board. 2. pulse width limited by maximum junction temperat ure sop-8 a h b m d c j k f l e n g ref. millimeter ref. millimeter min. max. min. max. a 5.80 6. 20 h 0 . 35 0 .4 9 b 4 . 80 5.0 0 j 0. 375 ref. c 3 . 80 4 . 0 0 k 45 d 0 8 l 1.35 1. 75 e 0.40 0.90 m 0.10 0 . 25 f 0. 19 0. 25 n 0.25 ref. g 1.27 typ. s1 g1 s2 d1 d1 d2 d2 g2
SSG4512CE n & p-ch enhancement mode power mosfet n-ch: 6.9 a, 30 v, r ds(on) 31 m ? p-ch: -5.2 a, -30 v, r ds(on) 52 m ? elektronische bauelemente 26-dec-2011 rev. a page 2 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. n-channel electrical characteristics (t a =25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions static gate threshold voltage v gs(th) 1 - - v v ds =v gs , i d =250 a gate-source leakage current i gss - - 100 na v gs = 8v, v ds =0 drain-source leakage current i dss - - 1 a v ds =24v, v gs =0 on-state drain current 1 i d(on) 20 - - a v ds =5v, v gs =10v static drain-source on-resistance 1 r ds(on) - - 31 m v gs =10v, i d =6.9a - - 40 v gs =4.5v, i d =6a forward transconductance 1 g fs - 25 - s v ds =15v, i d =6.9a dynamic total gate charge q g - 4.0 nc i d =6.9a v ds =15v v gs =10v gate-source charge q gs - 1.1 - gate-drain (miller) change q gd - 1.4 - turn-on delay time t d(on) - 8 - ns v dd =15v v gs =10v i d =1a r gen =6 rise time t r - 5 - turn-off delay time t d(off) - 23 - fall time t f - 3 - notes: 1. pulse test: pw Q 300us duty cycle Q 2%. 2. guaranteed by design, not subject to production testing.
SSG4512CE n & p-ch enhancement mode power mosfet n-ch: 6.9 a, 30 v, r ds(on) 31 m ? p-ch: -5.2 a, -30 v, r ds(on) 52 m ? elektronische bauelemente 26-dec-2011 rev. a page 3 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. p-channel electrical characteristics (t a =25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions static gate threshold voltage v gs(th) -1 - - v v ds =v gs , i d = -250 a gate-source leakage current i gss - - 100 na v gs = -8v, v ds =0 drain-source leakage current i dss - - -1 a v ds = -24v, v gs =0 on-state drain current 1 i d(on) -20 - - a v ds = -5v, v gs = -10v static drain-source on-resistance 1 r ds(on) - - 52 m v gs = -10v, i d = -5.2a - - 80 v gs = -4.5v, i d = -4.2a forward transconductance 1 g fs - 10 - s v ds = -15v, i d = -5.2a dynamic total gate charge q g - 10 nc i d = -5.2a v ds = -15v v gs = -10v gate-source charge q gs - 2.2 - gate-drain (miller) change q gd - 1.7 - turn-on delay time t d(on) - 10 - ns v dd = -15v v gs = -10v i d = -1a r gen =6 rise time t r - 2.8 - turn-off delay time t d(off) - 53.6 - fall time t f - 46 - notes: 1. pulse test: pw Q 300us duty cycle Q 2%. 2. guaranteed by design, not subject to production testing.
SSG4512CE n & p-ch enhancement mode power mosfet n-ch: 6.9 a, 30 v, r ds(on) 31 m ? p-ch: -5.2 a, -30 v, r ds(on) 52 m ? elektronische bauelemente 26-dec-2011 rev. a page 4 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curve (n-ch)
SSG4512CE n & p-ch enhancement mode power mosfet n-ch: 6.9 a, 30 v, r ds(on) 31 m ? p-ch: -5.2 a, -30 v, r ds(on) 52 m ? elektronische bauelemente 26-dec-2011 rev. a page 5 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curve (n-ch)
SSG4512CE n & p-ch enhancement mode power mosfet n-ch: 6.9 a, 30 v, r ds(on) 31 m ? p-ch: -5.2 a, -30 v, r ds(on) 52 m ? elektronische bauelemente 26-dec-2011 rev. a page 6 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curve (p-ch)
SSG4512CE n & p-ch enhancement mode power mosfet n-ch: 6.9 a, 30 v, r ds(on) 31 m ? p-ch: -5.2 a, -30 v, r ds(on) 52 m ? elektronische bauelemente 26-dec-2011 rev. a page 7 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curve (p-ch)
|
